Near band-edge 3.357 eV emission of Ga-face (0001) GaN grown by ammonothermal method

被引：8
作者：
Fujii, Katsushi [1 ]
Fujimoto, Gakuyo [1 ]
Goto, Takenari [1 ]
Yao, Takafumi [1 ,2 ]
Kagamitani, Yuji [3 ]
Hoshino, Naruhiro [3 ]
Ehrentraut, Dirk [3 ]
Fukuda, Tsuguo [3 ]
机构：
[1] Tohoku Univ, Interdisciplinary Res Ctr, Aoba Ku, Sendai, Miyagi 9808578, Japan
[2] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan
[3] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2007年 / 204卷 / 12期
关键词：
D O I：
10.1002/pssa.200723187
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Excitonic emission was observed at 3.357 eV by photoluminescence only from the (0001) Ga-face of GaN grown by an ammonothermal method. The emission intensity varied over the crystal surface. The temperature dependence of the emission intensity is similar to that of excitons bound to neutral donors for hexagonal (2H) GaN. The origin of the emission is discussed.(c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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页码：4266 / 4271
页数：6
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