Temperature and compositional dependence of the energy band gap of AlGaN alloys

被引：169

作者：

Nepal, N ^{[1
]}

Li, J ^{[1
]}

Nakarmi, ML ^{[1
]}

Lin, JY ^{[1
]}

Jiang, HX ^{[1
]}

机构：

[1] Kansas State Univ, Dept Phys, Manhattan, KS 66506 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 24期

关键词：

D O I：

10.1063/1.2142333

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Deep-ultraviolet photoluminescence spectroscopy has been employed to study the temperature and compositional dependence of the band gap of AlxGa1-xN alloys in the temperature range between 10 and 800 K. Band-edge emission peaks in AlxGa1-xN alloys were fitted by the Varshni equation to obtain Varshni coefficients, which increase nonlinearly with x. The values of Varshni coefficients obtained for GaN and AlN binary compounds in the present study are in good agreement with the previously reported values. Based on the experimental data, the compositional and temperature dependence of the band gap of AlxGa1-xN alloy has been empirically determined for the entire alloy range.

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页码：1 / 3

页数：3

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