Toward a Mechanistic Understanding of Vertical Growth of van der Waals Stacked 2D Materials: A Multiscale Model and Experiments

被引:111
作者
Ye, Han [1 ,2 ]
Zhou, Jiadong [3 ]
Er, Dequan [2 ]
Price, Christopher C. [2 ]
Yu, Zhongyuan [1 ]
Liu, Yumin [1 ]
Lowengrub, John [4 ,5 ]
Lou, Jun [6 ]
Liu, Zheng [3 ]
Shenoy, Vivek B. [2 ]
机构
[1] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
[2] Univ Penn, Dept Mat Sci & Engn, 3231 Walnut St, Philadelphia, PA 19104 USA
[3] Nanyang Technol Univ, Sch Mat Sci & Engn, Ctr Programmable Mat, Singapore 639798, Singapore
[4] Univ Calif Irvine, Dept Math, Irvine, CA 92697 USA
[5] Univ Calif Irvine, Dept Chem Engn & Mat Sci, Irvine, CA 92697 USA
[6] Rice Univ, Dept Mat Sci & NanoEngn, Houston, TX 77005 USA
基金
新加坡国家研究基金会; 美国国家科学基金会; 中国国家自然科学基金;
关键词
vertically stacked 2D materials; growth mechanisms; thermodynamic criterion; kinetic models; transition metal dichalcogenides; chemical vapor deposition; INITIO MOLECULAR-DYNAMICS; CHEMICAL-VAPOR-DEPOSITION; TOTAL-ENERGY CALCULATIONS; TRANSITION; HETEROSTRUCTURES; MOS2/WS2; RAMAN; ABSORPTION;
D O I
10.1021/acsnano.7b07604
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Vertical stacking of monolayers via van der Waals (vdW) interaction opens promising routes toward engineering physical properties of two-dimensional (2D) materials and designing atomically thin devices. However, due to the lack of mechanistic understanding, challenges remain in the controlled fabrication of these structures via scalable methods such as chemical vapor deposition (CVD) onto substrates. In this paper, we develop a general multiscale model to describe the size evolution of 2D layers and predict the necessary growth conditions for vertical (initial + subsequent layers) versus in-plane lateral (monolayer) growth. An analytic thermodynamic criterion is established for subsequent layer growth that depends on the sizes of both layers, the vdW interaction energies, and the edge energy of 2D layers. Considering the time-dependent growth process, we find that temperature and adatom flux from vapor are the primary criteria affecting the self-assembled growth. The proposed model clearly demonstrates the distinct roles of thermodynamic and kinetic mechanisms governing the final structure. Our model agrees with experimental observations of various monolayer and bilayer transition metal dichalcogenides grown by CVD and provides a predictive framework to guide the fabrication of vertically stacked 2D materials.
引用
收藏
页码:12780 / 12788
页数:9
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