Field emission characteristics of diamond films deposited by microwave plasma chemical vapor deposition

被引：0

作者：

Ji, H ^{[1
]}

Jin, ZS ^{[1
]}

Gu, CZ ^{[1
]}

Lu, XY ^{[1
]}

Zhou, GT ^{[1
]}

Yuan, G ^{[1
]}

Wang, WB ^{[1
]}

机构：

[1] Jilin Univ, Natl Key Lab Superhard Mat, Changchun 130023, Peoples R China

来源：

DISPLAY DEVICES AND SYSTEMS II | 1998年 / 3560卷

关键词：

field emission; diamond film; MWPCVD;

D O I：

10.1117/12.319667

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We have studied the field emission characteristics of diamond films. The diamond films were deposited on mirror-polished silicon substrates by bias enhanced nucleation (BEN) microwave plasma chemical vapor deposition (MWPCVD) technique. The nucleation density and surface morphological properties were analysed by means of SERI. The field emission characteristics of diamond films nucleated on different bias conditions were studied by measuring emission current versus voltage curves (I-V plots). The diamond film has small grain sizes and high nucleation density when bias value is high, it has low turn-on voltage. The diamond film nucleated on higher methane concentration has also low turn-on voltage and its emission current increases rapidly as voltage increases.

引用

页码：161 / 163

页数：3