A Novel Dual-Directional SCR Structure With High Holding Voltage for 12-V Applications in 0.13-μm BCD Process (vol 67, pg 5020, 2020)

被引:1
作者
Do, Kyoung-Il [1 ]
Song, Bo-Bae [2 ]
Koo, Yong-Seo [1 ]
机构
[1] Dankook Univ, Dept Elect & Elect Engn, Yongin 16890, South Korea
[2] Korea Elect Technol Inst KETI, SoC Platform Res Ctr, Seongnam 13509, South Korea
关键词
D O I
10.1109/TED.2021.3073182
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:4805 / 4805
页数:1
相关论文
共 1 条
[1]   A Novel Dual-Directional SCR Structure With High Holding Voltage for 12-V Applications in 0.13-μm BCD Process [J].
Do, Kyoung-Il ;
Song, Bo-Bae ;
Koo, Yong-Seo .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (11) :5020-5027