1.54 mu m electroluminescence from erbium doped gallium phosphide diodes

被引：3

作者：

Ford, GM ^{[1
]}

Wessels, BW ^{[1
]}

机构：

[1] NORTHWESTERN UNIV,DEPT MAT SCI & ENGN,EVANSTON,IL 60208

来源：

RARE EARTH DOPED SEMICONDUCTORS II | 1996年 / 422卷

关键词：

D O I：

10.1557/PROC-422-345

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：345 / 350

页数：6

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[50] 1.54 μm Electroluminescence by electron impact excitation of Er atoms doped in InP [J].

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