Nonlinear characteristics of on-chip spiral inductors under high RF power

被引：1
作者：
Jin, Shengyu [1 ]
Gao, Huai [2 ]
Li, G. P. [1 ]
机构：
[1] Univ Calif Irvine, Dept EECS, Irvine, CA 92697 USA
[2] Southeast Univ, Natl ASIC Syst Engn Res Ctr, Nanjing 210096, Peoples R China
来源：
MICROELECTRONICS JOURNAL | 2011年 / 42卷 / 02期
关键词：
High RF power; On-chip inductor; Quality factor; SOLENOID INDUCTOR; DESIGN; SILICON; TRANSFORMERS; TEMPERATURE; SI;
D O I：
10.1016/j.mejo.2010.10.001
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper explores silicon CMOS on-chip spiral inductors performance degradation under high RF power. A novel methodology to calibrate and characterize on-chip spiral inductor with large signal inputs (high/medium power) is presented. Experiments showed 12% degradation of quality factor in a particular inductor design when 34 dBm RF power was applied. The degradation of quality factor of inductor can be attributed to a local self heating effect. Thermal imaging of such an inductor under high RF power validates the hypothesis. (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码：440 / 444
页数：5
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