Low energy electron diffraction of epitaxial growth of bismuth on Si(111)

被引：65

作者：

Kammler, M ^{[1
]}

Hoegen, MHV ^{[1
]}

机构：

[1] Univ Duisburg Essen, Inst Laser & Plasmaphys, D-45117 Essen, Germany

来源：

SURFACE SCIENCE | 2005年 / 576卷 / 1-3期

关键词：

low energy electron diffraction (LEED); bismuth; silicon; epitaxial growth; structural transition;

D O I：

10.1016/j.susc.2004.11.033

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The epitaxial growth of Bi on Si(1 1 1) studied by spot profile analyzing low energy electron diffraction shows for low coverage rotationally disordered Bi cluster with preferred orientations following the threefold symmetry of the Si substrate. With further deposition the Bi cluster coalesces and the surface orientation changes from the pseudo cubic Bi(1 1 0) surface orientation of the Bi cluster into the hexagonal Bi(1 1 1) surface of the resulting Bi film. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：56 / 60

页数：5

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