Low energy electron diffraction of epitaxial growth of bismuth on Si(111)

被引：65
作者：
Kammler, M [1 ]
Hoegen, MHV [1 ]
机构：
[1] Univ Duisburg Essen, Inst Laser & Plasmaphys, D-45117 Essen, Germany
来源：
SURFACE SCIENCE | 2005年 / 576卷 / 1-3期
关键词：
low energy electron diffraction (LEED); bismuth; silicon; epitaxial growth; structural transition;
D O I：
10.1016/j.susc.2004.11.033
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The epitaxial growth of Bi on Si(1 1 1) studied by spot profile analyzing low energy electron diffraction shows for low coverage rotationally disordered Bi cluster with preferred orientations following the threefold symmetry of the Si substrate. With further deposition the Bi cluster coalesces and the surface orientation changes from the pseudo cubic Bi(1 1 0) surface orientation of the Bi cluster into the hexagonal Bi(1 1 1) surface of the resulting Bi film. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：56 / 60
页数：5
相关论文
共 50 条
  • [11] EPITAXIAL LAYER GROWTH OF AG(111)-FILMS ON SI(100)
    VONHOEGEN, MH
    SCHMIDT, T
    HENZLER, M
    MEYER, G
    WINAU, D
    RIEDER, KH
    SURFACE SCIENCE, 1995, 331 : 575 - 579
  • [12] Structure determination of Ag(111) by low-energy electron diffraction
    Soares, EA
    Nascimento, VB
    de Carvalho, VE
    de Castilho, CMC
    de Carvalho, AV
    Toomes, R
    Woodruff, DP
    SURFACE SCIENCE, 1999, 419 (2-3) : 89 - 96
  • [13] Phonon confinement effects in ultrathin epitaxial bismuth films on silicon studied by time-resolved electron diffraction
    Krenzer, B.
    Hanisch-Blicharski, A.
    Schneider, P.
    Payer, Th.
    Moellenbeck, S.
    Osmani, O.
    Kammler, M.
    Meyer, R.
    Horn-von Hoegen, M.
    PHYSICAL REVIEW B, 2009, 80 (02)
  • [14] Low-energy electron diffraction study of the thermal expansion of Ag(111)
    Soares, EA
    Leatherman, GS
    Diehl, RD
    Van Hove, MA
    SURFACE SCIENCE, 2000, 468 (1-3) : 129 - 136
  • [15] Solid phase growth and properties of Mg2Si epitaxial films on Si(111)
    Galkin, NG
    Vavanova, SV
    Galkin, KN
    Maslov, AM
    Fundamental Problems of Optoelectronics and Microelectronics II, 2005, 5851 : 435 - 440
  • [16] Photoemission and low-energy electron diffraction studies of 3,4,9,10-perylene tetracarboxylic dianhydride layers on Si(111):H
    Tengelin-Nilsson, M
    Ilver, L
    Kanski, J
    SURFACE SCIENCE, 2000, 464 (2-3) : 265 - 271
  • [17] Reactive epitaxial growth of MnSi ultrathin films on Si(111) by Mn deposition
    Higashi, Shougo
    Kocan, Pavel
    Tochihara, Hiroshi
    PHYSICAL REVIEW B, 2009, 79 (20):
  • [18] A novel approach to the epitaxial growth of CeO2 films on Si(111)
    Zarraga-Colina, J
    Nix, RM
    Weiss, H
    SURFACE SCIENCE, 2004, 563 (1-3) : L251 - L255
  • [19] Epitaxial growth and interfacial structure of Sn on Si(111)-(7 x 7)
    Roldan Cuenya, B
    Doi, M
    Keune, W
    SURFACE SCIENCE, 2002, 506 (1-2) : 33 - 46
  • [20] An investigation by spot profile analysis low energy electron diffraction of Si grown on GaAs(001)
    Levermann, AH
    Woolf, DA
    Westwood, DI
    Macdonald, JE
    SURFACE SCIENCE, 1996, 352 : 812 - 816
12345