Transitivity of band offsets between semiconductor heterojunctions and oxide insulators

被引：19

作者：

Afanas'ev, V. V. ^{[1
]}

Chou, H. -Y. ^{[1
]}

Houssa, M. ^{[1
]}

Stesmans, A. ^{[1
]}

Lamagna, L. ^{[2
]}

Lamperti, A. ^{[2
]}

Molle, A. ^{[2
]}

Vincent, B. ^{[3
]}

Brammertz, G. ^{[3
]}

机构：

[1] Univ Leuven, Dept Phys, B-3001 Heverlee, Belgium

[2] IMM CNR, Lab MDM, I-20864 Agrate Brianza, MB, Italy

[3] IMEC, B-3001 Louvain, Belgium

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 17期

关键词：

INTERFACE; ENERGY;

D O I：

10.1063/1.3655470

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By analyzing energy barriers for electrons at interfaces of Ge, GaAs, and In0.15Ga0.85As with insulating high-permittivity oxides (HfO2, ZrO2) using the spectroscopy of internal photoemission, we found that the insertion of a nanometer-thin interlayer of a dissimilar semiconductor, i.e., Si on Ge or Ge on GaAs, has no measurable influence on the interface band alignment. This result indicates the absence of any substantial interface dipoles across the stack composed of a semiconductor heterojunction and an insulating oxide and suggests the validity of the transitivity rule previously inferred on the basis of bulk-density-of-states arguments in the case of nanometer-sized multilayer structures. (C) 2011 American Institute of Physics. [doi:10.1063/1.3655470]

引用

页数：3

共 19 条

[11] Empirical tight-binding calculation of the branch-point energy of the continuum of interface-induced gap states [J].