Epitaxial growth of (100) Fe3Si thin films on insulating substrates

被引：2

作者：

Akiyama, Kensuke ^{[1
]}

Kadowaki, Teiko ^{[1
]}

Kaneko, Satoru ^{[1
]}

Kyoduka, Azusa ^{[2
]}

Sawada, Yutaka ^{[2
]}

Funakubo, Hiroshi ^{[3
]}

机构：

[1] Kanagawa Ind Technol Ctr, Ebina, Kanagawa 2430435, Japan

[2] Tokyo Polytech Univ, Kanagawa 2430297, Japan

[3] Tokyo Inst Technol, Dept Innovat & Engineered Mat, Yokohama, Kanagawa 2288505, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 7-9期

关键词：

physical vapor deposition processes; metals; magnetic materials;

D O I：

10.1016/j.jcrysgro.2007.11.076

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

(1 0 0)-Oriented Fe3Si films were epitaxially grown on the (1 0 0) MgO and (1 0 0) MgAl2O4 substrates by using rf sputtering. The lattice-mismatch relationship between Fe3Si and oxide single crystal affected the crystal growth of the (1 0 0)-oriented Fe3Si film. The lattice parameters of the epitaxial film on the (1 0 0) MgO substrates were almost the same as those of the bulk sample and the lattice-matching strain in the films was released, while the lattice-matching strain remained in the epitaxial films on the (1 0 0) MgAl2O4 substrates. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：1703 / 1707

页数：5

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