Graphene/AlGaN/GaN RF Switch

被引:7
作者
Yashchyshyn, Yevhen [1 ,2 ]
Bajurko, Pawel [1 ]
Sobolewski, Jakub [1 ]
Sai, Pavlo [2 ,3 ]
Przewloka, Aleksandra [2 ,4 ]
Krajewska, Aleksandra [2 ]
Prystawko, Pawel [5 ]
Dub, Maksym [2 ,3 ]
Knap, Wojciech [2 ,6 ]
Rumyantsev, Sergey [2 ]
Cywinski, Grzegorz [2 ]
机构
[1] Warsaw Univ Technol, Inst Radioelect & Multimedia Technol, PL-00665 Warsaw, Poland
[2] Inst High Pressure Phys PAS, CENTERA Labs, PL-01142 Warsaw, Poland
[3] Natl Acad Sci Ukraine, VE Lashkaryov Inst Semicond Phys, UA-03680 Kiev, Ukraine
[4] Mil Univ Technol, Inst Optoelect, PL-00908 Warsaw, Poland
[5] Inst High Pressure Phys PAS, PL-01142 Warsaw, Poland
[6] Univ Montpellier, CNRS, UMR 5221, Lab Charles Coulomb, F-34950 Montpellier, France
基金
欧盟地平线“2020”;
关键词
AlGaN/GaN; graphene; switches; two-dimensional high-density electron gas; millimeter-wave devices; S-PIN DIODES; GHZ; MODULATORS;
D O I
10.3390/mi12111343
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
RF switches, which use a combination of graphene and two-dimensional high-density electron gas (2DEG) in the AlGaN/GaN system, were proposed and studied in the frequency band from 10 MHz to 114.5 GHz. The switches were integrated into the coplanar waveguide, which allows them to be used in any system without the use of, e.g., bonding, flip-chip and other technologies and avoiding the matching problems. The on-state insertion losses for the designed switches were measured to range from 7.4 to 19.4 dB, depending on the frequency and switch design. Although, at frequencies above 70 GHz, the switches were less effective, the switching effect was still evident with an approximately 4 dB on-off ratio. The best switches exhibited rise and fall switching times of similar to 25 ns and similar to 17 ns, respectively. The use of such a switch can provide up to 20 MHz of bandwidth in time-modulated systems, which is an outstanding result for such systems. The proposed equivalent circuit describes well the switching characteristics and can be used to design switches with required parameters.
引用
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页数:11
相关论文
共 37 条
[1]   Time-Modulated Antenna Array for Real-Time Adaptation in Wideband Wireless Systems-Part I: Design and Characterization [J].
Bogdan, Grzegorz ;
Godziszewski, Konrad ;
Yashchyshyn, Yevhen ;
Kim, Cheol Ho ;
Hyun, Seok-Bong .
IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION, 2020, 68 (10) :6964-6972
[2]  
Borodulin Pavel, 2017, 2017 IEEE MTT-S International Microwave Symposium (IMS), P285, DOI 10.1109/MWSYM.2017.8059098
[3]   Properties of Chemical Vapor Deposition Graphene Transferred by High-Speed Electrochemical Delamination [J].
Ciuk, Tymoteusz ;
Pasternak, Iwona ;
Krajewska, Aleksandra ;
Sobieski, Jan ;
Caban, Piotr ;
Szmidt, Jan ;
Strupinski, Wlodek .
JOURNAL OF PHYSICAL CHEMISTRY C, 2013, 117 (40) :20833-20837
[4]   Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures [J].
Dub, Maksym ;
Sai, Pavlo ;
Przewloka, Aleksandra ;
Krajewska, Aleksandra ;
Sakowicz, Maciej ;
Prystawko, Pawel ;
Kacperski, Jacek ;
Pasternak, Iwona ;
Cywinski, Grzegorz ;
But, Dmytro ;
Knap, Wojciech ;
Rumyantsev, Sergey .
MATERIALS, 2020, 13 (18)
[5]   Millimeter-Wave Pattern Reconfigurable Vivaldi Antenna Using Tunable Resistor Based on Graphene [J].
Fan, Chi ;
Wu, Bian ;
Hu, Yue ;
Zhao, Yutong ;
Su, Tao .
IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION, 2020, 68 (06) :4939-4943
[6]   Correlation of p-doping in CVD Graphene with Substrate Surface Charges [J].
Goniszewski, S. ;
Adabi, M. ;
Shaforost, O. ;
Hanham, S. M. ;
Hao, L. ;
Klein, N. .
SCIENTIFIC REPORTS, 2016, 6
[7]   A 125-143-GHz Frequency-Reconfigurable BiCMOS Compact LNA Using a Single RF-MEMS Switch [J].
Heredia, Julio ;
Ribo, Miguel ;
Pradell, Lluis ;
Wipf, Selin Tolunay ;
Goeritz, Alexander ;
Wietstruck, Matthias ;
Wipf, Christian ;
Kaynak, Mehmet .
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2019, 29 (05) :339-341
[8]  
Hillman C., 2014, 2014 IEEE MTT-S International Microwave Symposium (IMS2014), P1
[9]   On-chip terahertz modulation and emission with integrated graphene junctions [J].
Island, Joshua O. ;
Kissin, Peter ;
Schalch, Jacob ;
Cui, Xiaomeng ;
Ul Haque, Sheikh Rubaiat ;
Potts, Alex ;
Taniguchi, Takashi ;
Watanabe, Kenji ;
Averitt, Richard D. ;
Young, Andrea F. .
APPLIED PHYSICS LETTERS, 2020, 116 (16)
[10]   A 300-GHz SPST Switch With a New Coupled-Line Topology in 65-nm CMOS Technology [J].
Kim, Jungsoo ;
Kim, Sooyeon ;
Song, Kiryong ;
Rieh, Jae-Sung .
IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY, 2019, 9 (02) :215-218