Microwave Annealing Effect for Highly Reliable Biosensor: Dual-Gate Ion-Sensitive Field-Effect Transistor Using Amorphous InGaZnO Thin-Film Transistor

被引：63

作者：

Lee, In-Kyu ^{[1
]}

Lee, Kwan Hyi ^{[2
]}

Lee, Seok ^{[3
]}

Cho, Won-Ju ^{[1
]}

机构：

[1] Kwangwoon Univ, Dept Elect Mat Engn, Seoul 139701, South Korea

[2] Korea Inst Sci & Technol, Biomed Res Inst, Seoul 136791, South Korea

[3] Korea Inst Sci & Technol, Sensor Syst Res Ctr, Seoul 136791, South Korea

来源：

ACS APPLIED MATERIALS & INTERFACES | 2014年 / 6卷 / 24期

关键词：

microwave annealing; a-InGaZnO; dual gate ISFET; biosensor; reliability; INSTABILITIES; HYSTERESIS; DNA;

D O I：

10.1021/am506805a

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We used a microwave annealing process to fabricate a highly reliable biosensor using amorphous-InGaZnO (a-IGZO) thin-film transistors (TFTs), which usually experience threshold voltage instability. Compared with furnace-annealed a-IGZO TFTs, the microwave-annealed devices showed superior threshold voltage stability and performance, including a high field-effect mobility of 9.51 cm(2)/V.s, a low threshold voltage of 0.99 V, a good subthreshold slope of 135 mV/dec, and an outstanding on/off current ratio of 1.18 x 10(8). In conclusion, by using the microwave-annealed a-IGZO TFT as the transducer in an extended-gate ion-sensitive field-effect transistor biosensor, we developed a high-performance biosensor with excellent sensing properties in terms of pH sensitivity, reliability, and chemical stability.

引用

页码：22680 / 22686

页数：7

共 34 条

[1] Enhanced Sensing Properties of Fully Depleted Silicon-on-Insulator-Based Extended-Gate Field-Effect Transistor with Dual-Gate Operation [J].

Bae, Tae-Eon ;

Cho, Won-Ju .

APPLIED PHYSICS EXPRESS, 2013, 6 (12)

[2] Effect of the Electrode Materials on the Drain-Bias Stress Instabilities of In-Ga-Zn-O Thin-Film Transistors [J].

Bak, Jun Yong ;

Yang, Sinhyuk ;

Ryu, Min Ki ;

Park, Sang Hee Ko ;

Hwang, Chi Sun ;

Yoon, Sung Min .

ACS APPLIED MATERIALS & INTERFACES, 2012, 4 (10) :5369-5374

[3] DEVELOPMENT OF AN ION-SENSITIVE SOLID-STATE DEVICE FOR NEUROPHYSIOLOGICAL MEASUREMENTS [J].

BERGVELD, P .

IEEE TRANSACTIONS ON BIOMEDICAL ENGINEERING, 1970, BM17 (01) :70-&

[4] COMPARISON OF THE HYSTERESIS OF TA2O5 AND SI3N4 PH-SENSING INSULATORS [J].

BOUSSE, L ;

MOSTARSHED, S ;

VANDERSCHOOT, B ;

DEROOIJ, NF .

SENSORS AND ACTUATORS B-CHEMICAL, 1994, 17 (02) :157-164

[5] High responsivity of amorphous indium gallium zinc oxide phototransistor with Ta2O5 gate dielectric [J].

Chang, T. H. ;

Chiu, C. J. ;

Weng, W. Y. ;

Chang, S. J. ;

Tsai, T. Y. ;

Huang, Z. D. .

APPLIED PHYSICS LETTERS, 2012, 101 (26)

[6] Oxygen-Dependent Instability and Annealing/Passivation Effects in Amorphous In-Ga-ZnO Thin-Film Transistors [J].

Chen, Wei-Tsung ;

Lo, Shih-Yi ;

Kao, Shih-Chin ;

Zan, Hsiao-Wen ;

Tsai, Chuang-Chuang ;

Lin, Jian-Hong ;

Fang, Chun-Hsiang ;

Lee, Chung-Chun .

IEEE ELECTRON DEVICE LETTERS, 2011, 32 (11) :1552-1554

[7] Flexible a-IZO thin film transistors fabricated by solution processes [J].

Cheng, Hua-Chi ;

Tsay, Chien-Yie .

JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 507 (01) :L1-L3

[8] Study on extended gate field effect transistor with tin oxide sensing membrane [J].

Chi, LL ;

Chou, JC ;

Chung, WY ;

Sun, TP ;

Hsiung, SK .

MATERIALS CHEMISTRY AND PHYSICS, 2000, 63 (01) :19-23

[9] Drift and hysteresis effects on AlN/SiO2 gate pH ion-sensitive field-effect transistor [J].

Chiang, JL ;

Chou, JC ;

Chen, YC ;

Liau, GS ;

Cheng, CC .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (08) :4973-4977

[10] High-Performance a-IGZO Thin-Film Transistor Using Ta2O5 Gate Dielectric [J].

Chiu, C. J. ;

Chang, S. P. ;

Chang, S. J. .

IEEE ELECTRON DEVICE LETTERS, 2010, 31 (11) :1245-1247

← 1 2 3 4 →