Surface Plasmon Coupling with Radiating Dipole for Enhancing the Emission Efficiency and Light Extraction of a Deep Ultraviolet Light Emitting Diode

被引：5
作者：
Yang, Yafeng [1 ]
Sun, Huiqing [1 ,2 ]
Zhang, Yaohua [1 ]
Su, Ha [1 ]
Shi, Xicheng [1 ]
Guo, Zhiyou [1 ,2 ]
机构：
[1] South China Normal Univ, Inst Semicond Sci & Technol, Guangzhou 510631, Peoples R China
[2] Guangdong Prov Engn Technol Res Ctr Low Carbon &, Guangzhou 510631, Peoples R China
来源：
PLASMONICS | 2020年 / 15卷 / 03期
关键词：
Localized surface plasmon; AlGaN; Light emitting diodes; Finite-difference time-domain method; UV-LEDS; NANOPARTICLE;
D O I：
10.1007/s11468-019-01107-4
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
In this paper, we numerically investigated the emission characteristics of surface plasmon (SP)-enhanced deep ultraviolet light emitting diode (DUV-LED) by employing Al/Al2O3 core-shell nanoparticle(NP) structure on the p-GaN contact layer by utilizing finite-difference time-domain (FDTD) method. The results suggest that normalized dipole power of TE (TM) polarization is enhanced (inhibited) in the DUV range by coupling with in-plane substrate localized surface plasmon (LSP) mode from Al/Al2O3 core-shell nanoparticle (NP). It is found that normalized upward extraction power for both polarizations can also be significantly increased by scattering effect when photons and excitons coupling with in-plane air LSP mode induced on the NP; thus, the light extraction efficiency (LEE) can be substantially enhanced. The depth d between quantum well (QW) and NP and NP size have a remarkable influence on LSP resonance wavelength. Through careful regulation of NP size and depth d, the emission characteristics in DUV range (240-280 nm) exhibit a considerable amelioration.
引用
收藏
页码：881 / 887
页数：7
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