Submicrometric SrTiO3-δ based devices realized by an atomic force microscope

被引：7

作者：

Pellegrino, L ^{[1
]}

Bellingeri, E ^{[1
]}

Pallecchi, I ^{[1
]}

Siri, AS ^{[1
]}

Marré, D ^{[1
]}

机构：

[1] CNR, INFM, LAMIA, IMEM,Dipartimento Fis, I-16146 Genoa, Italy

来源：

SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 12期

关键词：

D O I：

10.1016/S0038-1101(03)00196-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SrTiO3 (STO) is one of the key compounds in the emerging field of oxide electronics. Because of the low carrier concentration needed to turn it into the conducting state (10(18) e/cm(3)) and to its high bulk mobility (10(4) cm(2)/Vs @ 4.2 K), we consider STO suitable as functional conducting element in future oxide based devices. In this work we show how by applying a negative voltage to the conducting tip of an atomic force microscope it is possible to modify on sub-micron scale structural and electrical properties of conducting SrTiO3-delta thin films grown on insulating LaAlO3 substrates, thus realizing sub-micrometric STO electrical circuits. After discussing the mechanisms of the process, we present the fabrication of a SrTiO3-delta based side gate field effect transistor. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：2193 / 2198

页数：6

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