Photoluminescence of GaAs/AlGaAs quantum ring arrays

被引：26

作者：

Sibirmovskii, Yu. D. ^{[1
]}

Vasil'evskii, I. S. ^{[1
]}

Vinichenko, A. N. ^{[1
]}

Eremin, I. S. ^{[1
]}

Zhigunov, D. M. ^{[2
]}

Kargin, N. I. ^{[1
]}

Kolentsova, O. S. ^{[1
]}

Martyuk, P. A. ^{[1
]}

Strikhanov, M. N. ^{[1
]}

机构：

[1] Natl Res Nucl Univ MEPhI, Moscow 115409, Russia

[2] Moscow MV Lomonosov State Univ, Fac Phys, Moscow 119991, Russia

来源：

SEMICONDUCTORS | 2015年 / 49卷 / 05期

关键词：

GAAS; WELL;

D O I：

10.1134/S106378261505022X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Samples of epitaxial structures with GaAs/AlGaAs quantum rings different in morphology are grown by droplet epitaxy. The photoluminescence spectra of the samples are recorded at temperatures of 20-90 and 300 K. Intense peaks defined by quantum confinement of the charge-carrier energy in the quantum rings are observed in the optical region. The peaks are identified by estimating the energy of the ground state of electrons and holes in GaAs quantum rings and by recording the spectra of the samples after removing the layers with the quantum rings by etching. The average dimensions of the quantum rings are determined by atomic force microscopy and scanning electron microscopy. Some inferences about the factors that influence the emission spectrum and intensity of the epitaxial structures with quantum rings are drawn.

引用

页码：638 / 643

页数：6

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