Emerging applications for vertical cavity surface emitting lasers

被引：34

作者：

Harris, J. S. ^{[1
,2
]}

O'Sullivan, T. ^{[1
]}

Sarmiento, T. ^{[1
]}

Lee, M. M. ^{[1
]}

Vo, S. ^{[2
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2011年 / 26卷 / 01期

关键词：

CONTINUOUS-WAVE OPERATION; PLASMON RESONANCE; GAAS; PERFORMANCE; TRANSMISSION; RADIATION; VISUALIZATION; FLUORESCENCE; EMISSION; YIELD;

D O I：

10.1088/0268-1242/26/1/014010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Vertical cavity surface emitting lasers (VCSELs) emitting at 850 nm have experienced explosive growth in the past decade because of their many attractive optical features and incredibly low-cost manufacturability. This review reviews the foundations for GaAs-based VCSEL technology as well as the materials and device challenges to extend the operating wavelength to both shorter and longer wavelengths. We discuss some of the applications that are enabled by the integration of VCSELs with both active and passive semiconductor elements for telecommunications, both in vivo and in vitro biosensing, high-density optical storage and imaging at wavelengths much less than the diffraction limit of light.

引用

页数：11

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