Band Convergence in Thermoelectric Materials: Theoretical Background and Consideration on Bi-Sb-Te Alloys

被引:65
作者
Lee, Kyu Hyoung [3 ]
Kim, Sang-il [4 ]
Kim, Hyun-Sik [1 ]
Kim, Sung Wng [2 ]
机构
[1] Hongik Univ, Dept Mat Sci & Engn, Seoul 04066, South Korea
[2] Sungkyunkwan Univ, Dept Energy Sci, Suwon 16419, South Korea
[3] Yonsei Univ, Dept Mat Sci & Engn, Seoul 03722, South Korea
[4] Univ Seoul, Dept Mat Sci & Engn, Seoul 02504, South Korea
基金
新加坡国家研究基金会;
关键词
thermoelectric; band engineering; band convergence; Seebeck coefficient; Bi-Sb-Te; 2ND VALENCE-BAND; TRANSPORT-PROPERTIES; BI2TE3-SB2TE3; ALLOYS; ELECTRONIC-STRUCTURE; EFFECTIVE-MASS; PERFORMANCE; ENHANCEMENT; BI2TE3; INDIUM; STATES;
D O I
10.1021/acsaem.9b02131
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Band engineering is one of core approaches to improve the performance of thermoelectric materials via the Seebeck coefficient enhancement. However, the conclusion that is often found in the literature is that the band engineering has been achieved in haste when a simple increase in a density-of-states effective mass is observed. In this review, a theoretical background to the band convergence, the most effective band engineering strategy to improve the thermoelectric power factor, is provided. In addition, a straightforward reasoning that can be employed to distinguish the occurrence of band convergence in the observed Seebeck coefficient increase is presented with Bi-Sb-Te-based alloys as an example. We expect that this review will be served as a practical guide for the composition-controlled material design to improve the electronic transport properties in thermoelectric materials on the basis of the band engineering route.
引用
收藏
页码:2214 / 2223
页数:10
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