The effects of displacement threshold irradiation energy on deep levels in p-type 6H-SiC

被引：0

作者：

Alfieri, G. ^{[1
]}

Kimoto, T. ^{[1
,2
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Nishikyo Ku, Kyoto 6158510, Japan

[2] Kyoto Univ, Photon & Elect Sci & Engn Ctr, Nishikyo Ku, Kyoto 6158510, Japan

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2011年 / 23卷 / 06期

关键词：

SILICON-CARBIDE; N-TYPE; SPECTROSCOPY; DEFECTS; CENTERS;

D O I：

10.1088/0953-8984/23/6/065803

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report on the electrical characterization, by means of deep level transient spectroscopy, of electron-irradiated Al-doped 6H-SiC epilayers. Samples were irradiated with either 116 keV, in order to displace only carbon atoms, or 400 keV. Seven deep traps, in the 0.1-1.6 eV range above the valence band, were found. The thermal stability of the detected levels was analyzed by performing an isochronal annealing series in the 100-1800 degrees C temperature range and the atomic structure of most of the detected traps was found to be related to C-displacement.

引用

页数：4

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