Temporal response of silicon EUV and soft X-ray detectors

被引：11

作者：

Artyomov, A. P. ^{[1
]}

Baksht, E. H. ^{[1
]}

Tarasenko, V. F. ^{[1
]}

Fedunin, A. V. ^{[1
]}

Chaikovsky, S. A. ^{[1
]}

Aruev, P. N. ^{[2
]}

Zabrodskii, V. V. ^{[2
]}

Petrenko, M. V. ^{[2
]}

Sobolev, N. A. ^{[2
]}

Suhanov, V. L. ^{[2
]}

机构：

[1] Russian Acad Sci, Inst High Current Elect, Siberian Branch, Tomsk 634055, Russia

[2] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

INSTRUMENTS AND EXPERIMENTAL TECHNIQUES | 2015年 / 58卷 / 01期

关键词：

Pinch effect - Silicon detectors;

D O I：

10.1134/S0020441215010017

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A small-sized generator of picosecond electron beams is used to measure the temporal resolution of EUV and soft X-ray silicon detectors produced by the Ioffe Physical Technical Institute, Russian Academy of Sciences. The temporal resolution of the EUV and soft X-ray detectors based on silicon photodiodes is shown to be 1 ns. Preliminary experiments have been performed using these detectors with the aim of investigating the radiation characteristics of a soft X-ray source based on an X-pinch driven by a small-sized highcurrent generator with a current pulse amplitude of 250 kA. This source is used at the Institute of High Current Electronics for soft X-ray backlighting diagnostics of various plasmas.

引用

页码：102 / 106

页数：5

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