Chemical Vapor Deposition of Three Aminosilancs on Silicon Dioxide: Surface Characterization, Stability, Effects of Silane Concentration, and Cyanine Dye Adsorption

被引:162
|
作者
Zhang, Feng [2 ]
Sautter, Ken [3 ]
Larsen, Adam M. [2 ]
Findley, Daniel A. [2 ]
Davis, Robert C. [4 ]
Samha, Hussein [1 ]
Linford, Matthew R. [2 ]
机构
[1] So Utah Univ, Dept Phys Sci, Cedar City, UT 84720 USA
[2] Brigham Young Univ, Dept Chem & Biochem, Provo, UT 84602 USA
[3] Yield Engn Syst, Livermore, CA 94551 USA
[4] Brigham Young Univ, Dept Phys & Astron, Provo, UT 84602 USA
关键词
THIN-FILMS; OXIDE SURFACES; MONOLAYERS; NANOPARTICLES; SILANIZATION; REACTIVITY; SIO2; RGD; DNA;
D O I
10.1021/la102447y
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Covalently bonded monolayers of two monofunctional aminosilanes (3-aminopropyldimethylethoxysilane. APDMES, and 3-aminopropyldiisopropylethoxysilane, APDIPES) and one trifunctional aminosilane (3-aminopropyltriethoxysilane, APTES) have been deposited on dehydrated silicon subsumes by chemical vapor deposition (CVD) at 150 C and low pressure (a few Torr) using reproducible equipment Standard surface analytical techniques such as x-ray photoelectron spectroscopy (XPS). contact angle gontometry, spectroscopic ellipsometry. atomic force microscopy, and time-of-flight secondary ion mass spectroscopy (ToF-SIMS) have been employed to characterize the resulting Films These methods indicate that essentially constant surface coverages arc obtained over a wide range of gas phase concentrations of the aminosilanes XPS data further indicate that the NIs/Si2p ratio is Iliac! after CVD with the trifunctional Wane (APTES) compared to the monofunctional ones, with a higher NIs/Si2p ratio lot APDMES compared to that for APDIPES A FM images show an average surface roughness of 0 12 - 0 15 inn among all three aminosilane films Stability tests indicate that APDIPES films retain most of their integrity at pH 10 for several hours and are more stable than APTEs or APDMES layers The films also showed good stability against storage in the laboratory ToF-SIMS of these samples showed expected peaks, such as CN-, as well as CNO-, which may arise from an interaction between monolayer amine groups and silanols. Optical absorption measurements on adsorbed cyanine dye at the surface of the aminosilane films show the formation of dimer aggregates on the surface This is further supported by ellipsometry measurements. The concentration of dye on each surface appeals lobe consistent with the density of the amines
引用
收藏
页码:14648 / 14654
页数:7
相关论文
共 42 条
  • [1] Chemical vapor deposition of three aminosilanes on silicon dioxide: Surface characterization, stability, effects of silane concentration, and cyanine dye adsorption
    Samha, Hussein
    Linford, Matthew
    Zhang, Feng
    Davis, Robert
    Sautter, Ken
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2011, 241
  • [2] Silicon dioxide chemical vapor deposition using silane and hydrogen peroxide
    Gaillard, F
    Brault, P
    Brouquet, P
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (04): : 2767 - 2769
  • [3] APPARATUS FOR CHEMICAL VAPOR-DEPOSITION OF SILICON DIOXIDE FROM SILANE GAS
    MITRA, NK
    HEYNEN, CJH
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1976, 47 (06): : 757 - 761
  • [4] Electrical characterization of silicon dioxide thin films prepared by chemical vapor deposition for tetrakis(diethylamino)silane and ozone
    Maruyama, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1997, 36 (7B): : L922 - L925
  • [5] INFRARED CHARACTERIZATION OF SILICON DIOXIDE FILMS OBTAINED BY CHEMICAL VAPOR-DEPOSITION
    BORGHESI, A
    COLOMBO, L
    ROJAS, S
    WU, WS
    NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 1988, 10 (12): : 1487 - 1496
  • [6] KINETIC MODELING OF THE CHEMICAL VAPOR-DEPOSITION OF SILICON DIOXIDE FROM SILANE OR DISILANE AND NITROUS-OXIDE
    GIUNTA, CJ
    CHAPPLESOKOL, JD
    GORDON, RG
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (10) : 3237 - 3253
  • [7] KINETICS MODELING OF THE ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION OF SILICON DIOXIDE FROM SILANE AND OXYGEN
    GIUNTA, CJ
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1994, 208 : 99 - FUEL
  • [8] Plasma enhanced chemical vapor deposition and characterization of fluorine doped silicon dioxide films
    Yoo, WS
    Swope, R
    Mordo, D
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (1A): : 267 - 275
  • [9] Plasma enhanced chemical vapor deposition and characterization of fluorine doped silicon dioxide films
    Yoo, Woo Sik
    Swope, Richard
    Mordo, David
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1997, 36 (1 A): : 267 - 275
  • [10] Effects of hydrogen surface pretreatment of silicon dioxide on the nucleation and surface roughness of polycrystalline silicon films prepared by rapid thermal chemical vapor deposition
    Hu, YZ
    Zhao, CY
    Basa, C
    Gao, WX
    Irene, EA
    APPLIED PHYSICS LETTERS, 1996, 69 (04) : 485 - 487