Evidence for Vacancy-Related Recombination Active Defects in as-Grown N-Type Czochralski Silicon

被引：8
|
作者：
Zheng, P. [1 ]
Rougieux, F. E. [1 ]
Grant, N. E. [1 ]
Macdonald, D. [1 ]
机构：
[1] Australian Natl Univ, Res Sch Engn, Coll Engn & Comp Sci, Canberra, ACT 0200, Australia
来源：
IEEE JOURNAL OF PHOTOVOLTAICS | 2015年 / 5卷 / 01期
基金：
澳大利亚研究理事会;
关键词：
As-grown; Czochralski (Cz); defects; silicon; POINT-DEFECTS; P-TYPE; IMPURITIES; WAFERS;
D O I：
10.1109/JPHOTOV.2014.2366687
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
A recombination of active defect in very high lifetime Czochralski grown n-type silicon wafers, which can be thermally deactivated at 150 degrees C, is described. In addition, the existence of a recently measured defect, which is deactivated at 350 degrees C, is confirmed. Both defects are found to significantly degrade the lifetime of millisecond-range Czochralski-grownn-type silicon wafers: a material widely used for high-efficiency solar cells. The observed deactivation temperature suggests that it may be caused by vacancy-phosphorus pairs. The deactivation temperature of the second defect is consistent with the presence of vacancy-oxygen (V-O) pairs.
引用
收藏
页码：183 / 188
页数：6
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