Evidence for Vacancy-Related Recombination Active Defects in as-Grown N-Type Czochralski Silicon

被引：8

作者：

Zheng, P. ^{[1
]}

Rougieux, F. E. ^{[1
]}

Grant, N. E. ^{[1
]}

Macdonald, D. ^{[1
]}

机构：

[1] Australian Natl Univ, Res Sch Engn, Coll Engn & Comp Sci, Canberra, ACT 0200, Australia

来源：

IEEE JOURNAL OF PHOTOVOLTAICS | 2015年 / 5卷 / 01期

基金：

澳大利亚研究理事会;

关键词：

As-grown; Czochralski (Cz); defects; silicon; POINT-DEFECTS; P-TYPE; IMPURITIES; WAFERS;

D O I：

10.1109/JPHOTOV.2014.2366687

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

A recombination of active defect in very high lifetime Czochralski grown n-type silicon wafers, which can be thermally deactivated at 150 degrees C, is described. In addition, the existence of a recently measured defect, which is deactivated at 350 degrees C, is confirmed. Both defects are found to significantly degrade the lifetime of millisecond-range Czochralski-grownn-type silicon wafers: a material widely used for high-efficiency solar cells. The observed deactivation temperature suggests that it may be caused by vacancy-phosphorus pairs. The deactivation temperature of the second defect is consistent with the presence of vacancy-oxygen (V-O) pairs.

引用

页码：183 / 188

页数：6

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