Evidence for Vacancy-Related Recombination Active Defects in as-Grown N-Type Czochralski Silicon

被引：8
|
作者：
Zheng, P. [1 ]
Rougieux, F. E. [1 ]
Grant, N. E. [1 ]
Macdonald, D. [1 ]
机构：
[1] Australian Natl Univ, Res Sch Engn, Coll Engn & Comp Sci, Canberra, ACT 0200, Australia
来源：
IEEE JOURNAL OF PHOTOVOLTAICS | 2015年 / 5卷 / 01期
基金：
澳大利亚研究理事会;
关键词：
As-grown; Czochralski (Cz); defects; silicon; POINT-DEFECTS; P-TYPE; IMPURITIES; WAFERS;
D O I：
10.1109/JPHOTOV.2014.2366687
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
A recombination of active defect in very high lifetime Czochralski grown n-type silicon wafers, which can be thermally deactivated at 150 degrees C, is described. In addition, the existence of a recently measured defect, which is deactivated at 350 degrees C, is confirmed. Both defects are found to significantly degrade the lifetime of millisecond-range Czochralski-grownn-type silicon wafers: a material widely used for high-efficiency solar cells. The observed deactivation temperature suggests that it may be caused by vacancy-phosphorus pairs. The deactivation temperature of the second defect is consistent with the presence of vacancy-oxygen (V-O) pairs.
引用
收藏
页码：183 / 188
页数：6
相关论文
共 50 条
  • [1] NEW VACANCY-RELATED DEFECTS IN NORMAL-TYPE SILICON
    SONG, LW
    BENSON, BW
    WATKINS, GD
    PHYSICAL REVIEW B, 1986, 33 (02): : 1452 - 1455
  • [2] Onset of ring defects in n-type Czochralski-grown silicon wafers
    Basnet, Rabin
    Phang, Sieu Pheng
    Sun, Chang
    Rougieux, Fiacre E.
    Macdonald, Daniel
    JOURNAL OF APPLIED PHYSICS, 2020, 127 (15)
  • [3] High-resolution DLTS studies of vacancy-related defects in irradiated and in ion-implanted n-type silicon
    Evans-Freeman, JH
    Peaker, AR
    Hawkins, ID
    Kan, PYY
    Terry, J
    Rubaldo, L
    Ahmed, M
    Watts, S
    Dobaczewski, L
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2000, 3 (04) : 237 - 241
  • [4] RADIATIVE RECOMBINATION IN N-TYPE GAP GROWN BY THE CZOCHRALSKI METHOD
    NECHAEV, VM
    POLTORATSKII, EA
    SURIS, RA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (06): : 654 - 657
  • [5] Measurement, modelling and simulation of defects in as-grown Czochralski silicon
    Vanhellemont, J
    Senkader, S
    Kissinger, G
    Higgs, V
    Trauwaert, MA
    Graf, D
    Lambert, U
    Wagner, P
    JOURNAL OF CRYSTAL GROWTH, 1997, 180 (3-4) : 353 - 362
  • [6] Vacancy-related defects in n-type Si implanted with a rarefied microbeam of accelerated heavy ions in the MeV range
    Capan, I.
    Pastuovic, Z.
    Siegele, R.
    Jacimovic, R.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2016, 372 : 156 - 160
  • [7] Powerful recombination centers resulting from reactions of hydrogen with carbon-oxygen defects in n-type Czochralski-grown silicon
    Vaqueiro-Contreras, M.
    Markevich, V. P.
    Halsall, M. P.
    Peaker, A. R.
    Santos, P.
    Coutinho, J.
    Oberg, S.
    Murin, L. I.
    Falster, R.
    Binns, J.
    Monakhov, E. V.
    Svensson, B. G.
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2017, 11 (08):
  • [8] CRITICAL CRITERION FOR AXIAL MODELS OF DEFECTS IN AS-GROWN N-TYPE GAAS
    NOLTE, DD
    WALUKIEWICZ, W
    HALLER, EE
    PHYSICAL REVIEW B, 1987, 36 (17): : 9374 - 9377
  • [9] Electrically active defects in irradiated n-type Czochralski silicon doped with group IV impurities
    David, ML
    Simoen, E
    Claeys, C
    Neimash, V
    Kras'ko, M
    Kraitchinskii, A
    Voytovych, V
    Kabaldin, A
    Barbot, JF
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2005, 17 (22) : S2255 - S2266
  • [10] Diffusion and electrical properties of iron-related defects in n-type silicon grown by Czochralski- and floating zone method
    Tanaka, Shuji
    Kitagawa, Hajime
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1998, 37 (9 A): : 4656 - 4662
12345