Equivalent circuit parameters of resonant tunneling diodes extracted from self-consistent Wigner-Poisson simulation

The equivalent circuit parameters of resonant tunneling diodes (RTD) are extracted from numerical simulation results for RTDs. The RTD models used in this paper are double barrier structures. The influence of the resonant tunneling structure (RTS) parameters, such as the height of barriers, the width of the quantum well, the width of the spacers, and the width of the barriers, on the device parameters are systematically discussed. The effects of device temperature on device parameters are also discussed. Scattering between electrons and phonons greatly affects device parameters thereby the function of the RTDs. Physical explanations about how the structure parameters and device temperature influence the device parameters are provided. Based on the analysis results, a general way to get a RTD oscillator with a higher maximum frequency is suggested.