Spin-Transistor Electronics: An Overview and Outlook

被引:159
作者
Sugahara, Satoshi [1 ,2 ]
Nitta, Junsaku [3 ]
机构
[1] Tokyo Inst Technol, Imaging Sci & Engn Lab, Yokohama, Kanagawa 2268502, Japan
[2] Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan
[3] Tohoku Univ, Dept Mat Sci, Sendai, Miyagi 9808579, Japan
关键词
CMOS integrated circuits; half-metallic feromagnet; magnetoresistance; nonvolatile logic; power-gating architecture; programmable logic; spin transistor; spin transport; spintronics; FIELD-EFFECT TRANSISTORS; RANDOM-ACCESS MEMORY; ROOM-TEMPERATURE OPERATION; LOGIC INTEGRATED-CIRCUITS; MAGNETIC TUNNEL-JUNCTIONS; LOW-POWER; FERROMAGNETIC SEMICONDUCTOR; GIANT MAGNETORESISTANCE; POLARIZED CURRENT; HIGH-PERFORMANCE;
D O I
10.1109/JPROC.2010.2064272
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Spin transistors are a new concept device that unites an ordinary transistor with the useful functions of a spin (magnetoresistive) device. They are expected to be a building block for novel integrated circuits employing spin degrees of freedom. The interesting features of spin transistors are nonvolatile information storage and reconfigurable output characteristics: these are very useful and suitable functionalities for various new integrated circuit architectures that are inaccessible to ordinary transistor circuits. This article reviews the current status and outlook of spin transistors from the viewpoint of integrated circuit applications. The device structure, operating principle, performance, and features of various spin transistors are discussed. The fundamental and key phenomena/technologies for spin injection, transport, and manipulation in semiconductors and the integrated circuit applications of spin transistors to nonvolatile logic and reconfigurable logic are also described.
引用
收藏
页码:2124 / 2154
页数:31
相关论文
共 229 条
[1]  
Abe K., 2005, 2005 NSTI Nanotechnology Conference and Trade Show. NSTI Nanotech 2005, P203
[2]   Half-metallic interface between a Heusler alloy and Si [J].
Abe, Kazutaka ;
Miura, Yoshio ;
Shiozawa, Yasunori ;
Shirai, Masafumi .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2009, 21 (06)
[3]   Spin-polarized current switching of a Co thin film nanomagnet [J].
Albert, FJ ;
Katine, JA ;
Buhrman, RA ;
Ralph, DC .
APPLIED PHYSICS LETTERS, 2000, 77 (23) :3809-3811
[4]  
[Anonymous], 1963, Solid State Physics
[5]  
[Anonymous], 2009, INT TECHN ROADM SEM
[6]   Electronic measurement and control of spin transport in silicon [J].
Appelbaum, Ian ;
Huang, Biqin ;
Monsma, Douwe J. .
NATURE, 2007, 447 (7142) :295-298
[7]   Toward Nanowire Electronics [J].
Appenzeller, Joerg ;
Knoch, Joachim ;
Bjoerk, Mikael I. ;
Riel, Heike ;
Schmid, Heinz ;
Riess, Walter .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (11) :2827-2845
[8]  
Attema JJ, 2005, LECT NOTES PHYS, V678, P201
[9]   Challenges for semiconductor spintronics [J].
Awschalom, David D. ;
Flatte, Michael E. .
NATURE PHYSICS, 2007, 3 (03) :153-159
[10]   PROPOSAL FOR SURFACE TUNNEL TRANSISTORS [J].
BABA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (4B) :L455-L457