Impurity conduction in silicon carbide

被引:7
作者
Krieger, Michael [1 ]
Semmelroth, Kurt [1 ]
Weber, Heiko B. [1 ]
Pensl, Gerhard [1 ]
Rambach, Martin [1 ]
Frey, Lothar [1 ]
机构
[1] Univ Erlangen Nurnberg, Chair Appl Phys, DE-91058 Erlangen, Germany
来源
Silicon Carbide and Related Materials 2006 | 2007年 / 556-557卷
关键词
impurity conduction; hopping conduction; admittance spectroscopy;
D O I
10.4028/www.scientific.net/MSF.556-557.367
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We report on admittance spectroscopy (AS) investigations taken on aluminum (Al)doped 6H-SiC crystals at low temperatures. Admittance spectra taken on Schottky contacts of highly doped samples (N-A >= 7.2 x 10(17) cm(-3)) reveal two series of conductance peaks, which cause two different slopes of the Arrhenius plot. The steep slope is attributed to the At acceptor, while the flatter one - obtained from the low temperature peaks - is attributed to the activation energy epsilon(3) of nearest neighbor hopping. We propose a model, which explains the unexpected sharpness of the low temperature conductance peaks and the disappearance of these peaks for low acceptor concentrations. The model is verified by simulation, and the AS results are compared with corresponding results obtained from resistivity measurements taken on 4H- and the identical 6H-SiC samples.
引用
收藏
页码:367 / 370
页数:4
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