Thin-film stabilization of LiNbO3-type ZnSnO3 and MgSnO3 by molecular-beam epitaxy

被引：20

作者：

Fujiwara, Kohei ^{[1
]}

Minato, Hiroya ^{[1
]}

Shiogai, Junichi ^{[1
]}

Kumamoto, Akihito ^{[2
]}

Shibata, Naoya ^{[2
]}

Tsukazaki, Atsushi ^{[1
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[2] Univ Tokyo, Inst Engn Innovat, Tokyo 1138656, Japan

来源：

APL MATERIALS | 2019年 / 7卷 / 02期

关键词：

PULSED-LASER DEPOSITION; HIGH-PRESSURE SYNTHESIS; CRYSTAL;

D O I：

10.1063/1.5054289

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In polar crystals, cooperative ionic displacement produces a macroscopic spontaneous polarization. Among such polar materials, LiNbO3-type wide bandgap oxides are particularly appealing because they offer useful ferroelectric properties and also potentially lead to multiferroic materials. Using molecular-beam epitaxy, we investigated the thin-film growth of high-pressure phase LiNbO3-type ZnSnO3 and discovered a polar oxide candidate, MgSnO3. We found that LiNbO3-type substrates play an essential role in the crystallization of these compounds, though corundum-type Al2O3 substrates also have the identical crystallographic arrangement of oxygen sublattice. Optical transmittance and electrical transport measurements revealed their potential as a transparent conducting oxide. Establishment of a thin-film synthetic route would be the basis for exploration of functional polar oxides and research on conduction at ferroelectric interfaces and domain walls. (C) 2018 Author(s).

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页数：6

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