p-n Metallophosphor based on cationic iridium(III) complex for solid-state light-emitting electrochemical cells

被引:26
|
作者
Xu, Wen-Juan [1 ,2 ]
Liu, Shu-Juan [1 ,2 ]
Ma, Ting-Chun [1 ,2 ]
Zhao, Qiang [1 ,2 ]
Pertegas, Antonio [3 ]
Tordera, Daniel [3 ]
Bolink, Henk J. [3 ]
Ye, Shang-Hui [1 ,2 ]
Liu, Xiang-Mei [1 ,2 ]
Sun, Shi [1 ,2 ]
Huang, Wei [1 ,2 ]
机构
[1] Nanjing Univ Posts & Telecommun, KLOEID, Nanjing 210046, Peoples R China
[2] Nanjing Univ Posts & Telecommun, IAM, Nanjing 210046, Peoples R China
[3] Univ Valencia, Inst Ciencia Mol, ES-46071 Valencia, Spain
基金
中国国家自然科学基金;
关键词
ELECTROLUMINESCENT DEVICES; EFFICIENT; EMISSION; DIODES; LIGANDS; SERIES; PHOSPHORESCENCE; PHOTOPHYSICS; DERIVATIVES; WAVELENGTH;
D O I
10.1039/c1jm11987g
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
An ionic transition-metal complex for improved charge transporting properties was designed, containing both n-type dimesitylboryl (BMes(2)) and p-type carbazole groups. The complex, [Ir (Bpq)(2)(CzbpyCz)]PF(6) (1) (Bpq = 2-[4-(dimesitylboryl)phenyl] quinoline, CzbpyCz = 5,5 '-bis(9-hexyl-9H-carbazol-3-yl)-2,2 '-bipyridine) and its equivalent in which the BMes(2) groups were substituted with carbazole moieties were evaluated on the photoluminescence and excited state properties in detail. According to the photophysical and electrochemical properties, we concluded that the BMes(2) groups can increase the conjugation length of the cyclometalated C boolean AND N ligands and greatly enhance the phosphorescence efficiency over the carbazole groups. In addition, the bulky BMes(2) groups are effective in preventing the molecular aggregation in film. Both complexes were used to prepare single component light-emitting electrochemical cells (LECs). The electroluminescent devices show the typical behavior of LECs. The LEC based on the complex containing both electron-and hole-transporting groups shows the best performance. This work demonstrated that the design and synthesis of p-n metallophosphors will be beneficial for the improvement of device performances.
引用
收藏
页码:13999 / 14007
页数:9
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