On the Linear Temperature Dependence of Phonon Thermal Boundary Conductance in the Classical Limit

被引:28
作者
Duda, John C. [1 ,2 ]
Norris, Pamela M. [1 ]
Hopkins, Patrick E. [1 ,2 ]
机构
[1] Univ Virginia, Dept Mech & Aerosp Engn, Charlottesville, VA 22904 USA
[2] Sandia Natl Labs, Albuquerque, NM 87185 USA
来源
JOURNAL OF HEAT TRANSFER-TRANSACTIONS OF THE ASME | 2011年 / 133卷 / 07期
基金
美国国家科学基金会;
关键词
thermal boundary conductance; phonon; classical limit; silicon; germanium; diffuse mismatch model; molecular dynamics; MOLECULAR-DYNAMICS; KAPITZA CONDUCTANCE; CONDUCTIVITY; INTERFACES; PREDICTION; TRANSMISSION; RESISTANCE; TRANSPORT; SOLIDS; HEAT;
D O I
10.1115/1.4003575
中图分类号
O414.1 [热力学];
学科分类号
摘要
We present a new model for predicting thermal boundary conductance in the classical limit. This model takes a different form than those of the traditionally used mismatch theories in the fact that the temperature dependence of thermal boundary conductance is driven by the phononic scattering mechanisms of the materials comprising the interface as opposed to the heat capacities of those materials. The model developed in this work assumes that a phonon on one side of an interface may not scatter at the interface itself but instead scatter with phonons in the adjacent material via the scattering processes intrinsic in the adjacent material. We find that this model is in good agreement with classical molecular dynamics simulations of phonon transport across a Si/Ge interface. [DOI: 10.1115/1.4003575]
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页数:4
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