Mechanically stacked GaAs/GaInAsP dual-junction solar cell with high conversion efficiency of more than 31%

被引：4

作者：

Yamada, T ^{[1
]}

Moto, A ^{[1
]}

Iguchi, Y ^{[1
]}

Takahashi, M ^{[1
]}

Tanaka, S ^{[1
]}

Tanabe, T ^{[1
]}

Takagishi, S ^{[1
]}

机构：

[1] Sumitomo Elect Ind Ltd, Transmiss Devices R&D Labs, Itami, Hyogo 6640016, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 28-32期

关键词：

GaAs; GaInAsP; solar cell; efficiency; mechanically stacked; tandem cell;

D O I：

10.1143/JJAP.44.L988

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We successfully fabricated high-performance GaAs and GaInAsP (band gap = 0.95 eV) single-junction solar cells with an area of 1 x 1 cm(2). The conversion efficiencies of the GaAs and GaInAsP cells were 25.0 and 19.3%, respectively, under 1-sun air-mass 1.5 global (AM1.5G) conditions. The GaInAsP cell as the bottom cell under the mechanically stacked GaAs top cell also showed a high efficiency of 6.1%, and a total efficiency of 31.1% was achieved for the GaAs/GaInAsP tandem cell. This is the highest efficiency obtained under 1-sun AM1.5G conditions among the dual-junction cells ever reported.

引用

页码：L988 / L990

页数：3

共 9 条

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