Displacement damage effects in proton irradiated vertical-cavity surface-emitting lasers

被引：2

作者：

Chen, Jiawei ^{[1
,2
]}

Li, Yudong ^{[1
]}

Maliya, Heini ^{[1
]}

Liu, Bingkai ^{[1
,2
]}

Guo, Qi ^{[1
]}

Ren, Xiaotang ^{[3
]}

He, Chengfa ^{[1
]}

机构：

[1] Chinese Acad Sci, Key Lab Funct Mat & Devices Special Environm, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[3] Peking Univ, Inst Heavy Ion Phys, State Key Lab Nucl Phys & Technol, Beijing 100871, Peoples R China

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2022年 / 61卷 / 01期

基金：

中国国家自然科学基金; 中国科学院西部之光基金;

关键词：

VCSEL; displacement damage dose; annealing; displacement damage effects; SPACE;

D O I：

10.35848/1347-4065/ac40d0

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The displacement damage effects of vertical-cavity surface-emitting lasers (VCSELs) irradiated by 3 and 10 MeV protons in the range of CYRILLIC CAPITAL LETTER EF = 6.7 x 10(12) p cm(-2) to CYRILLIC CAPITAL LETTER EF = 1.6 x 10(14) p cm(-2) were investigated. The threshold current exhibited consistent degradation at the same displacement damage dose, as did the series resistance. Additionally, the external quantum efficiencies of 850 and 680 nm VCSELs were degraded by 2% and 21%, respectively. Further, the threshold current of the 850 nm VCSEL was restored by 14% after annealing at 20 mA, which is remarkably higher than that achieved by annealing only at high temperatures. These results support the applicability of VCSELs to both data communication and instrumentation applications in harsh radiation environments.

引用

页数：7

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