Electronic states of coupled quantum dot-ring structure under lateral electric field with and without a hydrogenic donor impurity

被引：22

作者：

Barseghyan, M. G. ^{[1
,2
]}

机构：

[1] Yerevan State Univ, Dept Solid State Phys, Yerevan 0025, Armenia

[2] Natl Univ Architecture & Construct Armenia, Yerevan 0009, Armenia

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2015年 / 69卷

关键词：

Coupled dot-ring; Lateral electric field; Hydrogenic donor impurity; HYDROSTATIC-PRESSURE; BINDING-ENERGY;

D O I：

10.1016/j.physe.2015.01.044

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A detailed investigation of the lateral electric field effect on single electron states in coupled quantum dot-ring structure has been systematically studied for cases with and without an on-center hydrogenic donor impurity. The single electron energy spectrum has been found using the effective mass approximation and an exact diagonalization technique. The electron ground state's probability density has been examined for different values of the confinement energies and depth of dot confinement relative to the bottom of the quantum ring and barrier thickness. The energy level's dependence on the electric field strength has been studied considering the effects of mentioned parameters of the structure and hydrogenic donor impurity. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：219 / 223

页数：5