SOI high-voltage device with step thickness sustained voltage layer

被引：14

作者：

Luo, X. ^{[1
]}

Zhang, B. ^{[1
]}

Li, Z. ^{[1
]}

Zhang, W. ^{[1
]}

Zhan, Z. ^{[1
]}

Xu, H. ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China

来源：

ELECTRONICS LETTERS | 2008年 / 44卷 / 01期

关键词：

D O I：

10.1049/el:20082131

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new SOI high-voltage device with a step thickness sustained voltage layer (ST SOI) is proposed. The electric field in the drift region is modulated, and that in the buried layer is enhanced by the variable-thickness SOI layer, resulting in enhancement of breakdown voltage (BV). BV for the ST SOI with two steps is twice as high as that of the conventional SOI, maintaining the low on-resistance (R-on).

引用

页码：55 / U71

页数：2

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