Strain Effect in Highly-Doped n-Type 3C-SiC-on-Glass Substrate for Mechanical Sensors and Mobility Enhancement

被引：7

作者：

Hoang-Phuong Phan ^{[1
,2
]}

Tuan-Khoa Nguyen ^{[1
]}

Toan Dinh ^{[1
]}

Cheng, Han-Hao ^{[3
]}

Mu, Fengwen ^{[4
]}

Iacopi, Alan ^{[1
]}

Hold, Leonie ^{[1
]}

Dzung Viet Dao ^{[1
,5
]}

Suga, Tadatomo ^{[4
]}

Senesky, Debbie G. ^{[2
,6
]}

Nam-Trung Nguyen ^{[1
]}

机构：

[1] Griffith Univ, Queensland Micro & Nanotechnol Ctr, West Creek Rd, Nathan, Qld 4111, Australia

[2] Stanford Univ, Dept Aeronaut & Astronaut, Stanford, CA 94305 USA

[3] Univ Queensland, Ctr Microscopy Microanal, Brisbane, Qld 4072, Australia

[4] Univ Tokyo, Dept Precis Engn, Tokyo 1138654, Japan

[5] Griffith Univ, Sch Engn, Gold Coast, Qld 4215, Australia

[6] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2018年 / 215卷 / 24期

基金：

澳大利亚研究理事会;

关键词：

MEMS; piezoresistance; silicon carbide; strain engineering; wafer bonding; SILICON-CARBIDE FILMS; PIEZORESISTANCE; ELECTRONICS; PLATFORM; ORIENTATION; FABRICATION; TRANSISTORS; GRAPHENE; GROWTH;

D O I：

10.1002/pssa.201800288

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This work reports the strain effect on the electrical properties of highly doped n-type single crystalline cubic silicon carbide (3C-SiC) transferred onto a 6-inch glass substrate employing an anodic bonding technique. The experimental data shows high gauge factors of -8.6 in longitudinal direction and 10.5 in transverse direction along the [100] orientation. The piezoresistive effect in the highly doped 3C-SiC film also exhibits an excellent linearity and consistent reproducibility after several bending cycles. The experimental result is in good agreement with the theoretical analysis based on the phenomenon of electron transfer between many valleys in the conduction band of n-type 3C-SiC. Our finding for the large gauge factor in n-type 3C-SiC coupled with the elimination of the current leak to the insulated substrate could pave the way for the development of single crystal SiC-on-glass based MEMS applications.

引用

页数：6

共 5 条

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APPLIED PHYSICS LETTERS, 2011, 98 (15)
[2] Electrical properties of n-type 3C-SiC epilayers in situ doped with extremely high levels of phosphorus
Colston, Gerard
Myronov, Maksym
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 33 (11)
[3] High Mobility WSe2 p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts
Chuang, Hsun-Jen
Tan, Xuebin
Ghimire, Nirmal Jeevi
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NANO LETTERS, 2014, 14 (06) : 3594 - 3601
[4] A large pseudo-Hall effect in n-type 3C-SiC(100) and its dependence on crystallographic orientation for stress sensing applications
Qamar, Afzaal
Dinh, Toan
Jafari, Mohsen
Iacopi, Alan
Dimitrijev, Sima
Dzung Viet Dao
MATERIALS LETTERS, 2018, 213 : 11 - 14
[5] Piezo-Hall effect and fundamental piezo-Hall coefficients of single crystal n-type 3C-SiC(100) with low carrier concentration
Qamar, Afzaal
Dao, Dzung Viet
Dinh, Toan
Iacopi, Alan
Walker, Glenn
Phan, Hoang-Phuong
Hold, Leonie
Dimitrijev, Sima
APPLIED PHYSICS LETTERS, 2017, 110 (16)

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