Catalytic synthesis and luminescent characteristics of GaN nanorods

被引：4

作者：

Chen Jin-Hua ^{[1
]}

Xue Cheng-Shan ^{[1
]}

Zhuang Hui-Zhao ^{[1
]}

Li Hong ^{[1
]}

Qin Li-Xia ^{[1
]}

Yang Zhao-Zhu ^{[1
]}

机构：

[1] Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China

来源：

ACTA PHYSICO-CHIMICA SINICA | 2008年 / 24卷 / 02期

关键词：

GaN; nanorods; single crystal; luminescence;

D O I：

10.3866/PKU.WHXB20080230

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Rare earth metal seed Tb was employed for the growth of GaN nanorods. GaN nanorods were synthesized successfully through ammoniating Ga(2)O3/Tb films sputtered on Si(111) substrates. X-ray diffraction results indicated that the nanorods were hexagonal GaN. Observations using scanning electron microscopy and high-resolution transmission electron microscopy showed that GaN was of single-crystal nanorod structure, with diameter 50-150 nm and length about 10 mu m. Photoluminescence spectrum showed a strong UV emission peak at 368.6 nm, indicating that the products possess good luminescent characteristics. The growth mechanism of GaN nanorods was also discussed.

引用

页码：355 / 358

页数：4

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