Effect of microstructure on the ferroelectric properties of Eu-doped Bi4 Ti3 O12 ferroelectric thin film

被引：0
作者：
Lue Ye-Gang [1 ,2 ]
Liang Xiao-Lin [1 ]
Tan Yong-Hong [1 ]
Zheng Xue-Jun [2 ]
Gong Yue-Qiu [2 ]
He Lin [2 ]
机构：
[1] Hunan Univ Sci & Engn, Dept Elect Engn, Yongzhou 425100, Peoples R China
[2] Xiangtan Univ, Fac Mat & Photoelect Phys, Xiangtan 411105, Peoples R China
来源：
ACTA PHYSICA SINICA | 2011年 / 60卷 / 02期
关键词：
ferroelectric thin film; domain switching; scanning probe microscopy; DOMAIN; EVOLUTION;
D O I：
10.7498/aps.60.027701
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Eu-doped bismuth titanate Bi-3.15 Eu-0.85 Ti3O12 (BET) ferroelectric thin film was prepared on the Pt/Ti/Si (111) substrates by metal-organic decomposition (MOD) at different annealing temperatures of 600 degrees C, 650 degrees C and 700 degrees C. The structure and ferroelectric properties of BET thin film were analyzed. The nanoscale domain switching was investigated by scanning probe microscopy (SPM) via direct observation. When the polarizing voltage increases to + 6 V, the ferroelectric c-domain suffers 180 degrees domain switching. The ferroelectric r-domain can not be reversed due to its highly tetragonal structure even if the polarized voltage value increases to + 12 V. The ferroelectric properties of the BET thin films are dependent on the polarization of ferroelectric c-domain. With the increasing annealing temperature, the area of c-domain becomes larger, and the remnant polarization (2Pr) values of BET films increase. The value of 2Pr reaches 84 mu C/cm for BET thin film annealed at the temperature of 700 degrees C.
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页数：6
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