Growth of Ag on Pb Island with Si(111) Substrate

被引：1

作者：

Hu, Xiao-Peng ^{[1
,2
,3
,4
]}

Zhu, Rui ^{[1
,2
,4
]}

Xu, Jun ^{[1
,2
,4
]}

Ji, Shuai-Hua ^{[3
,4
]}

Chen, Xi ^{[3
,4
]}

Xue, Qi-Kun ^{[3
,4
]}

Yu, Da-Peng ^{[1
,2
,4
]}

机构：

[1] Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China

[2] Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China

[3] Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China

[4] Collaborat Innovat Ctr Quantum Matter, Beijing 100084, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2016年 / 33卷 / 07期

基金：

中国国家自然科学基金;

关键词：

IMMISCIBLE METALS; SURFACE; PB(111); FILMS;

D O I：

10.1088/0256-307X/33/7/078101

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We study the growth of Ag on Pb island surface with low temperature scanning tunnelling microscopy. Two growth modes, the subsurface island mode and the surface alloy mode, are observed on the substrate at room temperature and at 100 K, respectively. In the surface alloy mode, the perfect alloy AgPb2 is formed on the Pb island surface after annealing. The two growth modes at different substrate temperatures are attributed to the existence of an exchange barrier of Ag atoms on the Pb island surface. The modulation of the exchange barrier by the quantum well states is also observed on the Pb island.

引用

页数：4

共 50 条

[21] Molecular beam epitaxy growth of monolayer hexagonal MnTe2 on Si(111) substrate* [J].

Lu, S. ;

Peng, K. ;

Wang, P. D. ;

Chen, A. X. ;

Ren, W. ;

Fang, X. W. ;

Wu, Y. ;

Li, Z. Y. ;

Li, H. F. ;

Cheng, F. Y. ;

Xiong, K. L. ;

Yang, J. Y. ;

Wang, J. Z. ;

Ding, S. A. ;

Jiang, Y. P. ;

Wang, L. ;

Li, Q. ;

Li, F. S. ;

Chi, L. F. .

CHINESE PHYSICS B, 2021, 30 (12)

[22] Growth and characterization of epilayer of SiC on Si (111) substrate using single solid source MBE [J].

Asghar, M. ;

Mahmood, K. ;

Nawaz, M. A. ;

Tsu, R. .

13TH INTERNATIONAL SYMPOSIUM ON ADVANCED MATERIALS (ISAM 2013), 2014, 60

[23] Optical properties of InN grown on Si(111) substrate [J].

Sakalauskas, E. ;

Schley, P. ;

Raethel, J. ;

Klar, T. A. ;

Mueller, R. ;

Pezoldt, J. ;

Tonisch, K. ;

Grandal, J. ;

Sanchez-Garcia, M. A. ;

Calleja, E. ;

Vilalta-Clemente, A. ;

Ruterana, P. ;

Goldhahn, R. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2010, 207 (05) :1066-1069

[24] Direct growth of graphene on Si(111) [J].

Pham Thanh Trung ;

Campos-Delgado, Jessica ;

Joucken, Frederic ;

Colomer, Jean-Francois ;

Hackens, Benoit ;

Raskin, Jean-Pierre ;

Santos, Cristiane N. ;

Robert, Sporken .

JOURNAL OF APPLIED PHYSICS, 2014, 115 (22)

[25] Growth of ordered molecular layers of PTCDA on Pb/Si(111) surfaces: a scanning tunneling microscopy study [J].

Nicoara, N. ;

Mendez, J. ;

Gomez-Rodriguez, J. M. .

NANOTECHNOLOGY, 2016, 27 (36)

[26] Heteroepitaxial growth of a rotated AlInSb layer mediated by an InSb bi-layer on a Si(111) substrate [J].

Saito, Mitsufumi ;

Mori, Masayuki ;

Ueda, Koji ;

Maezawa, Koichi .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 6, 2009, 6 (06) :1497-+

[27] Controllable growth of single-layer graphene on a Pd(111) substrate [J].

Gao, Jian-Hua ;

Ishida, Nobuyuki ;

Scott, Isaacson ;

Fujita, Daisuke .

CARBON, 2012, 50 (04) :1674-1680

[28] STM study of the electronic structure of PTCDA on Ag/Si(111)-√3 x √3 [J].

Zhang, H. M. ;

Gustafsson, J. B. ;

Johansson, L. S. O. .

CHEMICAL PHYSICS LETTERS, 2010, 485 (1-3) :69-76

[29] Graphene on Pt(111): Growth and substrate interaction [J].

Sutter, Peter ;

Sadowski, Jerzy T. ;

Sutter, Eli .

PHYSICAL REVIEW B, 2009, 80 (24)

[30] Unoccupied electronic structure and relaxation dynamics of Pb/Si(111) [J].

Sandhofer, M. ;

Sklyadneva, I. Yu. ;

Sharma, V. ;

Trontl, V. Miksic ;

Zhou, P. ;

Ligges, M. ;

Heid, R. ;

Bohnen, K. -P. ;

Chulkov, E. V. ;

Bovensiepen, U. .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 2014, 195 :278-284

← 1 2 3 4 5 →