Growth of Ag on Pb Island with Si(111) Substrate

被引:1
|
作者
Hu, Xiao-Peng [1 ,2 ,3 ,4 ]
Zhu, Rui [1 ,2 ,4 ]
Xu, Jun [1 ,2 ,4 ]
Ji, Shuai-Hua [3 ,4 ]
Chen, Xi [3 ,4 ]
Xue, Qi-Kun [3 ,4 ]
Yu, Da-Peng [1 ,2 ,4 ]
机构
[1] Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
[2] Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China
[3] Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
[4] Collaborat Innovat Ctr Quantum Matter, Beijing 100084, Peoples R China
基金
中国国家自然科学基金;
关键词
IMMISCIBLE METALS; SURFACE; PB(111); FILMS;
D O I
10.1088/0256-307X/33/7/078101
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We study the growth of Ag on Pb island surface with low temperature scanning tunnelling microscopy. Two growth modes, the subsurface island mode and the surface alloy mode, are observed on the substrate at room temperature and at 100 K, respectively. In the surface alloy mode, the perfect alloy AgPb2 is formed on the Pb island surface after annealing. The two growth modes at different substrate temperatures are attributed to the existence of an exchange barrier of Ag atoms on the Pb island surface. The modulation of the exchange barrier by the quantum well states is also observed on the Pb island.
引用
收藏
页数:4
相关论文
共 50 条
  • [1] Growth of Ag on Pb Island with Si(111) Substrate
    胡小鹏
    朱瑞
    徐军
    季帅华
    陈曦
    薛其坤
    俞大鹏
    Chinese Physics Letters, 2016, 33 (07) : 178 - 181
  • [2] Kinetics measurements of Pb island growth on Si(111)
    Menzel, A
    Kammler, M
    Conrad, EH
    Yeh, V
    Hupalo, M
    Tringides, MC
    PHYSICAL REVIEW B, 2003, 67 (16):
  • [3] SUBSTRATE DIFFUSION IN THE EPITAXIAL-GROWTH OF AG ON PB(111) SURFACE
    CHEN, CH
    SANSALONE, FJ
    SURFACE SCIENCE, 1985, 163 (2-3) : L688 - L692
  • [4] PB PREADSORPTION FACILITATES ISLAND FORMATION DURING GA GROWTH ON SI(111)
    HIBINO, H
    SHIMIZU, N
    SUMITOMO, K
    SHINODA, Y
    NISHIOKA, T
    OGINO, T
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1994, 12 (01): : 23 - 28
  • [5] Effect of substrate doping concentration on quantum well states of Pb island grown on Si(111)
    Zhang, Xieqiu
    Liu, Jiepeng
    Li, Baikui
    Wang, Kedong
    Ming, Fangfei
    Wang, Jiannong
    Xiao, Xudong
    SURFACE SCIENCE, 2010, 604 (02) : 175 - 180
  • [6] GROWTH AND MORPHOLOGY OF PB ON SI(111)
    GANZ, E
    HWANG, IS
    XIONG, FL
    THEISS, SK
    GOLOVCHENKO, J
    SURFACE SCIENCE, 1991, 257 (1-3) : 259 - 273
  • [7] Analysis of island morphology in a model for Pb-mediated growth of Ge on Si(111)
    Beben, J
    Hwang, IS
    Tsong, TT
    PHYSICAL REVIEW B, 2001, 64 (23)
  • [8] GROWTH OF Si ATOMIC WIRES ON Pb-MEDIATED Si (111) 7 x 7 SUBSTRATE
    Chayterjee, K.
    Chang, T. -C.
    Chang, S. -H.
    Hong, I. Po
    Hwang, I. -S.
    INTERNATIONAL JOURNAL OF NANOSCIENCE, 2011, 10 (1-2) : 129 - 133
  • [9] STRUCTURE AND GROWTH OF EPITAXIAL PB ON SI(111)
    WEITERING, HH
    HESLINGA, DR
    HIBMA, T
    PHYSICAL REVIEW B, 1992, 45 (11): : 5991 - 6002
  • [10] FLUX DEPENDENCE OF THE AG/SI(111) GROWTH
    ROOS, KR
    TRINGIDES, MC
    EUROPHYSICS LETTERS, 1993, 23 (04): : 257 - 262