Improvement in Device Performance of Vertical Thin-Film Transistors Using Atomic Layer Deposited IGZO Channel and Polyimide Spacer

被引：55

作者：

Kim, Yeo-Myeong ^{[1
]}

Kang, Han-Byeol ^{[1
]}

Kim, Gi-Heon ^{[2
]}

Hwang, Chi-Sun ^{[2
]}

Yoon, Sung-Min ^{[1
]}

机构：

[1] Kyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin 446701, South Korea

[2] Elect & Telecommun Res Inst, Smart IO Platform Res Dept, Daejeon 305730, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2017年 / 38卷 / 10期

基金：

新加坡国家研究基金会;

关键词：

Vertical channel; oxide thin-film transistor (TFT); ALD-grown In-Ga-Zn-O (IGZO); TEMPERATURE;

D O I：

10.1109/LED.2017.2736000

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Technical strategies for improving the device characteristics of the In-Ga-Zn-O (IGZO) vertical channel thin-film transistors (VTFTs) were presented and investigated. The vertical sidewall was constructed by dry-etch process and subsequently covered with IGZO, Al2O3, and AZO as active, gate insulator, and gate electrode layers by means of conformal atomic-layer-deposition. An abrupt profile and flat back-channel were achieved by employing the spin-coated polyimide (PI) spacer. The Off-current was additionally alleviated simply by cutting the area of an active layer. The fabricated IGZO VTFT using PI spacer with an "active-cut" structure exhibited an On/off ratio of 10(3), a linear mobility of 7.1 cm(2)/Vs, and a subthreshold swing of 1.2 V/decade.

引用

页码：1387 / 1389

页数：3

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