Emerging heterogeneous integrated photonic platforms on silicon

被引:54
|
作者
Fathpour, Sasan [1 ,2 ]
机构
[1] Univ Cent Florida, CREOL, Coll Opt & Photon, 4304 Scorpius St, Orlando, FL 32816 USA
[2] Univ Cent Florida, Dept Elect Engn & Comp Sci, Orlando, FL 32816 USA
基金
美国国家科学基金会;
关键词
integrated photonics; integrated optics; silicon photonics; mid-infrared photonics; optoelectronics; electrooptics; photodetectors; semiconductor lasers; optical modulators; nonlinear optics; silicon; germanium; gallium arsenide; indium phosphide; tantalum pentoxide; silicon nitride; silicon dioxide; lithium niobate; GE-ON-SI; WAVE-GUIDE PHOTODETECTORS; TEMPERATURE LASER OPERATION; STRAINED-LAYER SUPERLATTICE; LITHIUM-NIOBATE; ROOM-TEMPERATURE; MICRORING RESONATORS; NONLINEAR ABSORPTION; RAMAN AMPLIFICATION; HYBRID INTEGRATION;
D O I
10.1515/nanoph-2014-0024
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI) waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths) and feasibility of electrically-injected lasers (at least at room temperature). More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the free-carrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III-V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for different purposes with the common feature of integrating them on a single substrate, most notably silicon.
引用
收藏
页码:143 / 164
页数:22
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