Mutual Ferromagnetic-Ferroelectric Coupling in Multiferroic Copper-Doped ZnO

被引：91

作者：

Herng, Tun Seng ^{[2
]}

Wong, Meng Fei ^{[3
]}

Qi, Dongchen ^{[1
,4
]}

Yi, Jiabao ^{[2
]}

Kumar, Amit ^{[3
]}

Huang, Alicia ^{[5
]}

Kartawidjaja, Fransiska Cecilia ^{[2
]}

Smadici, Serban ^{[6
]}

Abbamonte, Peter ^{[6
]}

Sanchez-Hanke, Cecilia ^{[7
]}

Shannigrahi, Santiranjan ^{[5
]}

Xue, Jun Min ^{[2
]}

Wang, John ^{[2
]}

Feng, Yuan Ping ^{[1
]}

Rusydi, Andrivo ^{[1
,4
]}

Zeng, Kaiyang ^{[3
]}

Ding, Jun ^{[2
]}

机构：

[1] Natl Univ Singapore, Dept Phys, NUSSNI NanoCore, Singapore 117542, Singapore

[2] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 119260, Singapore

[3] Natl Univ Singapore, Dept Mech Engn, Singapore 117576, Singapore

[4] Natl Univ Singapore, Singapore Synchrotron Light Source, Singapore 117603, Singapore

[5] Inst Mat Res & Engn, Singapore 117602, Singapore

[6] Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA

[7] Brookhaven Natl Lab, Natl Synchrotron Light Source, Upton, NY 11973 USA

来源：

ADVANCED MATERIALS | 2011年 / 23卷 / 14期

关键词：

THIN-FILMS;

D O I：

10.1002/adma.201004519

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A mutual ferromagnetic and ferroelectric coupling (multiferroic behavior) in Cu-doped ZnO is demonstrated via deterministic control of Cu doping and defect engineering. The coexistence of multivalence Cu ions and oxygen vacancies is important to multiferroic behaviors in ZnO:Cu. The samples show clear ferroelectric and ferromagnetic domain patterns. These domain structures may be written reversibly via electric and magnetic bias.

引用

页码：1635 / +

页数：7

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