Performance Optimization of Antenna-Coupled Al/AlOx/Pt Tunnel Diode Infrared Detectors

被引：105

作者：

Bean, Jeffrey A. ^{[1
]}

Weeks, Arthur ^{[2
]}

Boreman, Glenn D. ^{[1
]}

机构：

[1] Univ Cent Florida, Coll Opt & Photon, Orlando, FL 32816 USA

[2] Univ Cent Florida, Dept Elect Engn & Comp Sci, Orlando, FL 32816 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2011年 / 47卷 / 01期

关键词：

Antennas; infrared detectors; infrared measurements; thin film devices; tunnel diodes; OXIDE-METAL DIODES; NIO-NI DIODES; POINT-CONTACT DIODE; 30 THZ RADIATION; FILM; FREQUENCIES; JUNCTIONS; LASER; EXTENSION; DEVICES;

D O I：

10.1109/JQE.2010.2081971

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Signal-to-noise ratio (SNR) is a valuable figure of merit in determining the operating scope of infrared detectors. Antenna-couple metal-oxide-metal diodes have been shown to detect infrared radiation without cooling or applied bias, but so far have been hampered by their SNR. This paper details a comprehensive study of the fabrication parameters that control the formation of the tunneling oxide barrier to optimize the performance of these detectors. Since the tunneling barrier affects both current-voltage and infrared detection characteristics, fabrication parameters can be optimized to improve device performance. The current-voltage characteristics of the devices are detailed in this paper; resistance, nonlinearity, and curvature coefficient are parameterized on fabrication procedures. Infrared detection characteristics are detailed and SNR is studied as a function of device nonlinearity and biasing conditions.

引用

页码：126 / 135

页数：10

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