Current-induced effective field in perpendicularly magnetized Ta/CoFeB/MgO wire

被引：133
作者：
Suzuki, T. [1 ]
Fukami, S. [2 ]
Ishiwata, N. [2 ]
Yamanouchi, M. [3 ]
Ikeda, S. [3 ,4 ]
Kasai, N. [2 ,3 ]
Ohno, H. [3 ,4 ]
机构：
[1] Renesas Elect Corp, Kanagawa 2525298, Japan
[2] NEC Corp Ltd, Kanagawa 2525298, Japan
[3] Tohoku Univ, Ctr Spintron Integrated Syst, Sendai, Miyagi 9808577, Japan
[4] Tohoku Univ, Elect Commun Res Inst, Lab Nanoelect & Spintron, Sendai, Miyagi 9808577, Japan
来源：
APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 14期
基金：
日本学术振兴会;
关键词：
D O I：
10.1063/1.3579155
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The current-induced effective field in perpendicularly magnetized Ta/CoFeB/MgO wire was investigated. A threshold field decrease of 6.4 kOe/mA was observed by measuring the threshold field of Hall resistance versus the magnetic field curve with various bias currents. The decrease was probably caused by the in-plane effective field, mainly due to the Rashba effect. The effective field of the Ta/CoFeB/MgO wire was smaller and opposite in direction compared to that of Pt/Co/AlO(x) previously reported. (C) 2011 American Institute of Physics. [doi:10.1063/1.3579155]
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页数：3
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