Hydrogen blistering of silicon: Effect of implantation temperature, isotope dependence, and key role of dynamic annealing

被引：7
|
作者：
Giguere, Alexandre [1 ]
Terreault, Bernard [1 ]
机构：
[1] Univ Quebec, INRS EMT, Varennes, PQ J3X 1S2, Canada
来源：
JOURNAL OF APPLIED PHYSICS | 2007年 / 102卷 / 10期
基金：
加拿大自然科学与工程研究理事会;
关键词：
D O I：
10.1063/1.2818105
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Blistering of (001) Cz-Si crystals (>1 Omega cm), by either protium (H) or deuterium (D) ions of 5 keV energy, was studied as a function of the sample temperature during implantation in the range of 150-450 K. It was found that the blistering dose thresholds decreased with temperature, and very dramatically so in the case of D ions, revealing new aspects of the giant isotope effect. An optimal implantation temperature for ion cutting was found around 100 degrees C, where the required dose is reduced and the isotope effect is minimized. The results are interpreted in terms of models of the interaction of implanted hydrogen with radiation defects, and they show that dynamic annealing is incomparably more efficient in promoting blistering than purely thermal annealing. (C) 2007 American Institute of Physics.
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页数：3
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