Structural modifications in thin films caused by gamma radiation

被引：12

作者：

Arshak, K ^{[1
]}

Korostynska, O

Henry, J

机构：

[1] Univ Limerick, Dept Elect & Comp Engn, Limerick, Ireland

[2] Univ Limerick, Mat & Surface Sci Inst, Limerick, Ireland

来源：

CROSS-DISCIPLINARY APPLIED RESEARCH IN MATERIALS SCIENCE AND TECHNOLOGY | 2005年 / 480卷

关键词：

gamma radiation; thin film; metal oxides; XRD; Raman spectra;

D O I：

10.4028/www.scientific.net/MSF.480-481.13

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper reports on the gamma radiation-induced changes in thin oxide films deposited by thermal vacuum technique. Structures of various oxides thin films, such as In2O3, SiO and TeO2 and their mixtures in different proportions were studied. The influence of gamma radiation on In2O3/SiO films has resulted in significant changes in the microstructure of this film. Some kind of agglomerations with variable sizes in the range 0.5-3 mu m has occurred. After a dose of 8160 mu Sv an evidence of partial crystallisation was observed with X-ray diffraction. Structural changes in TeO2 thin film were explored by means of Raman spectroscopy. After they have been exposed to gamma-radiation, a strong peak appeared at 448.83 cm(-1), indicating further transformation to gamma-TeO2 modification.

引用

页码：13 / 19

页数：7

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