240-GHz Gain-Bandwidth Product Back-Side Illuminated AlInAs Avalanche Photodiodes

被引：31

作者：

Lahrichi, M. ^{[1
]}

Glastre, G. ^{[1
]}

Derouin, E. ^{[1
]}

Carpentier, D. ^{[1
]}

Lagay, N. ^{[1
]}

Decobert, J. ^{[1
]}

Achouche, M. ^{[1
]}

机构：

[1] Alcatel Lucent Bell Labs France, Alcatel Thales Lab 3 5, F-91400 Marcoussis, France

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2010年 / 22卷 / 18期

关键词：

AlInAs; avalanche photodiode (APD); dark current; excess noise factor; GaInAs; gain-bandwidth product; NOISE; JUNCTION; DIODES;

D O I：

10.1109/LPT.2010.2057503

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate an AlInAs-InGaAs separate absorption, grading, and multiplication avalanche photodiode (APD) with a very thin avalanche layer operating at 1550 nm for 10-Gb/s optical transmission achieving simultaneously high responsivity (0.9 A/W at M = 1), very low excess noise factor (F(M = 10) = 3), and very high gain-bandwidth product of 240 GHz. To our knowledge, this is the first time that a back-side illuminated planar junction AlInAs-InGaAs APD achieved such performances.

引用

页码：1373 / 1375

页数：3

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