Modeling of carrier mobility for semispherical quantum dot infrared photodetectors (QDIPs)

被引：5
作者：
El-Batawy, Yasser M. [1 ,2 ]
Hosny, Ahmed [2 ]
机构：
[1] Cairo Univ, Engn Math & Phys Dept, Fac Engn, Giza 12211, Egypt
[2] Nile Univ, Nanoelect Integrated Syst Ctr, Cairo 12588, Egypt
来源：
OPTICAL AND QUANTUM ELECTRONICS | 2020年 / 52卷 / 02期
关键词：
Quantum dot; QDIP (Quantum Dot Infrared Photodetector); Mobility; Semispherical; Photodetectors; Infrared; Dark Current; Boltzmann Transport Equation; DARK-CURRENT;
D O I：
10.1007/s11082-019-2170-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Carrier mobility for quantum dot infrared photodetectors is considered as one of the critical parameters to determine many important device's performance parameters such as the electrical conductivity, drift velocity, dark current and photocurrent. In this paper a complete theoretical model of the carrier mobility for semispherical quantum dot structures is developed. This model is based on the solution of Boltzmann transport equation all over the device. A parametric study of the effects of the QD density and the dimensions of the QD on the carrier mobility is investigated. Finally, the carrier mobility in semispherical QDIP is compared with other QD structures. The presented model is a generic model that can be applied for different semispherical QD structures.
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页数：10
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