High-speed pin ultraviolet photodetectors fabricated on GaN

被引：32

作者：

Carrano, JC ^{[1
]}

Li, T ^{[1
]}

Brown, DL ^{[1
]}

Grudowski, PA ^{[1
]}

Eiting, CJ ^{[1
]}

Dupuis, RD ^{[1
]}

Campbell, JC ^{[1
]}

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 18期

关键词：

D O I：

10.1049/el:19981272

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report very high-speed GaN-based ultraviolet photodetectors using a pin device structure. The best devices have rise times of similar to 90ps and bandwidths of similar to 1.6GHz at -30V. This is the fastest speed for a GaN-based photodetector reported to date.

引用

页码：1779 / 1781

页数：3

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