Ab initio study of lithium and sodium in diamond

被引:22
作者
Lombardi, E. B. [1 ]
Mainwood, Alison [2 ]
Osuch, K. [1 ]
机构
[1] Univ S Africa, Dept Phys, ZA-0003 Pretoria, South Africa
[2] Kings Coll London, Dept Phys, London WC2R 2LS, England
基金
英国工程与自然科学研究理事会;
关键词
D O I
10.1103/PhysRevB.76.155203
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Interstitial lithium and sodium have been suggested as alternatives to phosphorus to achieve shallow n-type doping of diamond. Experimental results have, however, been contradictory. We report ab initio density functional theory modeling of lithium and sodium in diamond and show that although interstitial Li and Na are likely to behave as shallow donors, interstitial Li will readily diffuse with a low activation energy and that it is energetically favorable for both species to be trapped at existing vacancies in diamond. The resulting substitutional centers are themselves not only passivated but also induce deep levels in the band gap of diamond, compensating the remaining donors. This explains the high resistivity observed in lithium and sodium doped diamond. This demonstrates that samples should not be exposed to elevated temperatures in order to prevent Li diffusion, while concentrations of vacancies and other defects should be minimized to restrict the formation of compensating substitutional Li acceptors, if n-type doping of diamond is to be achieved with Li. For sodium, we show that it is energetically favorable for Na to be incorporated in diamond as a substitutional acceptor rather than as an interstitial donor. This is consistent with experimental observations of Na diffusing as a negative ion under electric bias in diamond. It is therefore unlikely that diamond will be successfully n-type doped with Na.
引用
收藏
页数:8
相关论文
共 66 条
[1]  
[Anonymous], 1973, Crystal Data: Determinative Tables
[2]   PSEUDOPOTENTIALS THAT WORK - FROM H TO PU [J].
BACHELET, GB ;
HAMANN, DR ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1982, 26 (08) :4199-4228
[3]   Model for the defect-related electrical conductivity in ion-damaged diamond [J].
Baskin, E ;
Reznik, A ;
Saada, D ;
Adler, J ;
Kalish, R .
PHYSICAL REVIEW B, 2001, 64 (22)
[4]  
Blaha P, 2001, WIEN2K AUGMENTED PLA
[5]   IMPROVED TETRAHEDRON METHOD FOR BRILLOUIN-ZONE INTEGRATIONS [J].
BLOCHL, PE ;
JEPSEN, O ;
ANDERSEN, OK .
PHYSICAL REVIEW B, 1994, 49 (23) :16223-16233
[6]   ELECTRICAL CHARACTERIZATION OF HOMOEPITAXIAL DIAMOND FILMS DOPED WITH B, P, LI AND NA DURING CRYSTAL-GROWTH [J].
BORST, TH ;
WEIS, O .
DIAMOND AND RELATED MATERIALS, 1995, 4 (07) :948-953
[7]   CHANNELING ANALYSIS OF HIGH-TEMPERATURE ION-IMPLANTED DIAMOND [J].
BRAUNSTEIN, G ;
KALISH, R .
NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :691-697
[8]   DAMAGE AND LATTICE LOCATION STUDIES IN HIGH-TEMPERATURE ION-IMPLANTED DIAMOND [J].
BRAUNSTEIN, G ;
KALISH, R .
APPLIED PHYSICS LETTERS, 1981, 38 (06) :416-418
[9]   POST-PROCESSING OF DIAMOND AND DIAMOND FILMS - A REVIEW OF SOME HARWELL WORK [J].
BUCKLEYGOLDER, IM ;
BULLOUGH, R ;
HAYNS, MR ;
WILLIS, JR ;
PILLER, RC ;
BLAMIRES, NG ;
GARD, G ;
STEPHEN, J .
DIAMOND AND RELATED MATERIALS, 1991, 1 (01) :43-50
[10]   The origin of shallow n-type conductivity in boron-doped diamond with H or S co-doping: Density functional theory study [J].
Cai, Yu ;
Zhang, Tianhou ;
Anderson, Alfred B. ;
Angus, John C. ;
Kostadinov, Lubomir N. ;
Albu, Titus V. .
DIAMOND AND RELATED MATERIALS, 2006, 15 (11-12) :1868-1877