Mobility Enhancement in Indium-rich N-channel InxGa1-xAs HEMTs by Application of <110> Uniaxial Strain

被引：0
作者：
Xia, Ling [1 ]
del Alamo, Jesus A. [1 ]
机构：
[1] MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA
来源：
2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2010年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
As in Si CMOS, the incorporation of mechanical strain offers the possibility of improving the performance of III-V field effect transistors (FETs). Quantifying its potential and providing fundamental understanding of the impact of strain are the goals of this study. This paper reports an investigation of the impact of < 110 > uniaxial strain on n-type InAlAs/InGaAs HEMTs with a 70% InAs channel core. The main impact of strain is found to be a modification of the electron effective mass and mobility. A comparison between the effect of < 110 > strain in Si and InGaAs suggests that strain engineering can indeed be leveraged to improve transport properties in deeply scaled InGaAs FETs.
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